发明名称 |
Nonvolatile semiconductor memory device, semiconductor device and manufacturing method of nonvolatile semiconductor memory device |
摘要 |
A nonvolatile semiconductor memory device includes a gate portion formed by laminating a tunnel insulating film, floating gate electrode, inter-poly insulating film and control gate electrode on a semiconductor substrate, and source and drain regions formed on the substrate. The tunnel insulating film has a three-layered structure having a silicon nitride film sandwiched between silicon oxide films. The silicon nitride film is continuous in an in-plane direction and has 3-coordinate nitrogen bonds and at least one of second neighboring atoms of nitrogen is nitrogen. |
申请公布号 |
US8093126(B2) |
申请公布日期 |
2012.01.10 |
申请号 |
US20100659694 |
申请日期 |
2010.03.17 |
申请人 |
MITANI YUUICHIRO;MATSUSHITA DAISUKE;OOBA RYUJI;KAMIOKA ISAO;OZAWA YOSHIO;KABUSHIKI KAISHA TOSHIBA |
发明人 |
MITANI YUUICHIRO;MATSUSHITA DAISUKE;OOBA RYUJI;KAMIOKA ISAO;OZAWA YOSHIO |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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