| 摘要 |
PURPOSE: A method for manufacturing a semiconductor substrate and a method for manufacturing a semiconductor device using the same are provided to easily separate a single semiconductor substrate from a single crystal epitaxial layer by forming a gap in a boundary between the single crystal semiconductor substrate and the single crystal epitaxial layer. CONSTITUTION: A first semiconductor substrate including a separation layer(11) is prepared. An ion implantation layer(12) is formed on the edge of the separation layer. A second semiconductor substrate is bonded to the upper side of the first semiconductor substrate. A gap is formed in the ion implantation layer by giving stress to the ion implantation layer. A part of the first semiconductor substrate is separated. |
