发明名称 |
Lateral insulated gate bipolar transistor having a retrograde doping profile in base region and method of manufacture thereof |
摘要 |
In a semiconductor device of the present invention, a first base region 16 is extended to a part under a gate electrode 7 while having a vertical concentration profile of an impurity that increases from the surface of a semiconductor layer 3 and becomes maximum under an emitter region 5, and the length in the lateral direction from a point where the impurity concentration becomes maximum located under an end of the gate electrode 7 to the boundary with a second base region 15 is not smaller than the length in the vertical direction from the point where the impurity concentration becomes maximum to the boundary with the second base region 15. |
申请公布号 |
US8093131(B2) |
申请公布日期 |
2012.01.10 |
申请号 |
US20100963665 |
申请日期 |
2010.12.09 |
申请人 |
IKUTA TERUHISA;SATO YOSHINOBU;PANASONIC CORPORATION |
发明人 |
IKUTA TERUHISA;SATO YOSHINOBU |
分类号 |
H01L21/331;H01L21/8222 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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