发明名称 |
Nitride semiconductor device and method for producing nitride semiconductor device |
摘要 |
This nitride semiconductor device comprises: an n-type first layer made of a group III nitride semiconductor; a p-type second layer made of a group III nitride semiconductor layer provided on the first layer; and an n-type third layer made of a group III nitride semiconductor with a p-type impurity content of not more than 1×1018 cm−3 provided on the second layer. |
申请公布号 |
US8093627(B2) |
申请公布日期 |
2012.01.10 |
申请号 |
US20080344351 |
申请日期 |
2008.12.26 |
申请人 |
OTAKE HIROTAKA;CHIKAMATSU KENTARO;ROHM CO., LTD. |
发明人 |
OTAKE HIROTAKA;CHIKAMATSU KENTARO |
分类号 |
H01L29/205;H01L21/336;H01L29/78 |
主分类号 |
H01L29/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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