| 发明名称 |
METHOD OF FABRICATING NANOMETER GAPS IN SIC SEMICONDUCTOR |
| 摘要 |
<p>PURPOSE: A method for manufacturing a nano gap structure of a SiC semiconductor is provided to form a nano gap in a desirable area by applying a loading force, a scratching speed, and a scratching cycle to a probe of an atomic force microscope. CONSTITUTION: A metal thin film(1) is deposited on a SiC(2). A deposited metal thin film is scratched by using a probe of an atomic force microscope. A nano gap is formed by scratching. A minute structure is formed on the SiC by an inductively coupled plasma etching. The deposited metal thin film is removed.</p> |
| 申请公布号 |
KR20120003117(A) |
申请公布日期 |
2012.01.10 |
| 申请号 |
KR20100063788 |
申请日期 |
2010.07.02 |
| 申请人 |
AHN, JUNG JOON;KOO, SANG MO |
发明人 |
AHN, JUNG JOON;KOO, SANG MO |
| 分类号 |
H01L21/336;H01L29/78 |
主分类号 |
H01L21/336 |
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