发明名称 |
Iron sulfide semiconductor doped with Mg or Zn, junction devices and photoelectric converter comprising same |
摘要 |
The semiconductor of the present invention has iron sulfide and a forbidden band control element contained in the iron sulfide. The forbidden band control element has a property capable of controlling the forbidden band of iron sulfide on the basis of the number density of the forbidden band control element in the iron sulfide. An n-type semiconductor is manufactured by incorporating a group 13 element of the IUPAC system into iron sulfide. Moreover, a p-type semiconductor is manufactured by incorporating a group Ia element into iron sulfide. A semiconductor junction device or a photoelectric converter is manufactured by using the n-type semiconductor and the p-type semiconductor.
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申请公布号 |
US8093684(B2) |
申请公布日期 |
2012.01.10 |
申请号 |
US20070651086 |
申请日期 |
2007.01.09 |
申请人 |
NASUNO YOSHIYUKI;KOHAMA NORIYOSHI;NISHIMURA KAZUHITO;SHARP KABUSHIKI KAISHA |
发明人 |
NASUNO YOSHIYUKI;KOHAMA NORIYOSHI;NISHIMURA KAZUHITO |
分类号 |
H01L29/24;H01L29/36;H01L31/032;H01L31/036;H01L31/068 |
主分类号 |
H01L29/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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