发明名称 |
Method of fabricating a semiconductor device |
摘要 |
According to one embodiment, a method of fabricating a semiconductor device is disclosed. The method can include forming an amorphous layer on a portion of a first silicon substrate having a first plane orientation, and irradiating with micro wave on the amorphous layer to transform from the amorphous layer into a crystalline layer having the first plane orientation. |
申请公布号 |
US8093141(B2) |
申请公布日期 |
2012.01.10 |
申请号 |
US20100878780 |
申请日期 |
2010.09.09 |
申请人 |
AOYAMA TOMONORI;MIYANO KIYOTAKA;KABUSHIKI KAISHA TOSHIBA |
发明人 |
AOYAMA TOMONORI;MIYANO KIYOTAKA |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|