| 摘要 |
A flash memory cell includes a substrate, a source, a drain, a first oxide, a second oxide, a floating gate and a control gate. The source and a drain are formed in the substrate separately, and are doped with N-type ions. The first oxide is formed on the substrate. The floating gate is formed on the first oxide, wherein the floating gate is doped with P-type ions. The second oxide formed on the floating gate. The control gate formed on the second oxide. |
