SEMICONDUCTOR DEVICE

摘要

PURPOSE: A semiconductor device is provided to prevent hydrogen which is expanded to an oxide semiconductor layer by forming an insulating layer having halogen concentration more than 1×1020atoms/cm^3 and hydrogen concentration less than 6×1020atoms/cm^3. CONSTITUTION: An oxide semiconductor layer(106) is formed on an insulating layer(108). One part of a gate insulating layer(104) is touched with the oxide semiconductor layer. A gate electrode layer(103) is formed on the gate insulating layer. The hydrogen concentration of the insulating layer is less than 6×1020atoms/cm^3. The halogen concentration of the insulating layer is more than 1×1020atoms/cm^3. The insulating layer is provided between a substrate and the oxide semiconductor layer. The insulating layer is an oxide insulating layer.