发明名称 |
SPUTTERING APPARATUS AND METHOD FOR FORMING TRANSPARENT CONDUCTIVE OXIDE OF LIGHT EMITTING DEVICE |
摘要 |
PURPOSE: A sputtering device and method for forming a transparent conductive film of an emitting device is provided to prevent the deterioration of a p-type semiconductor by controlling the influence of plasma. CONSTITUTION: A target receiving part(110) is located in one inner side wall of a chamber. A substrate receiving part(130) is formed in a location which faces the target receiving part. Metal net filters(190) having more than 2 layers are formed between the target receiving part and the substrate receiving part. At least one layer among the metal net filters having more than 2 layers is used for forming the transparent conductive film of an emitting device which is used as a grounding electrode. The metal net filters having more than 2 layers have a mesh type or a stripe type scale.
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申请公布号 |
KR20120002821(A) |
申请公布日期 |
2012.01.09 |
申请号 |
KR20100063524 |
申请日期 |
2010.07.01 |
申请人 |
SAMSUNG LED CO., LTD. |
发明人 |
SHIN, YOUNG CHUL;KIM, GI BUM;HUR, WON GOO |
分类号 |
H01L21/203 |
主分类号 |
H01L21/203 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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