| 摘要 |
PURPOSE: The unit pixel array of a CMOS image sensor is provided to receive incident light from photo-diodes without loss by changing the wavelength of the incident light. CONSTITUTION: The unit pixel array(100) of a CMOS(Complementary Metal Oxide Semiconductor) image sensor comprises a semiconductor substrate(110), an interlayer dielectric layer(120), a wavelength conversion layer(130), color filters(140), and a micro lens(150). The unit pixel array of the CMOS image sensor additionally comprises a first anti-reflective layer(160) which is formed between the rear side of the semiconductor substrate and the wavelength conversion layer. A second anti-reflection layer is formed between the front side of the semiconductor substrate and the interlayer dielectric layer. Incident light enters into the rear side of the semiconductor substrate after passing through the micro lens, the color filters, and the wavelength conversion layer. |
