| 摘要 |
<p>PURPOSE: An NAND flash memory which includes a three-dimensional star structure capable of selecting a layer and a manufacturing method thereof are provided to independently select each string laminated in a layer selection line, thereby horizontally increasing the desired number of bit lines. CONSTITUTION: An active line is arranged with two or more semiconductor layers(22,24,26,28). A bit line(BLs) is electrically connected to the semiconductor layer with one line. A plurality of layer selection lines(LSL1,LSL2,LSL3) is arranged with the same number as the number of the semiconductor layers. A word line(WLs) is arranged by being separated from the layer selection lines. A ground selection line(GSL) is arranged by being separated from the word lines. A common source line(CSL) is electrically connected to the active lines.</p> |
