| 摘要 |
PURPOSE: A plasma etching method is provided to prevent the generation of striations by preventing pattern damage or deformation which is created in an upper layer resist film or a lower layer resist film. CONSTITUTION: A pre-etching film is etched by plasma using a multilayer resist mask. The multilayer resist mask comprises an upper layer resist film, an inorganic film system intermediate layer(202), and a lower layer resist film(203). A sidewall protection layer formation process forms a sidewall protection layer(206) in the sidewall of lower layer resist. The sidewall protection layer formation process is executed after a lower layer resist formation process. The sidewall protection layer formation process is executed by the plasma of mixing gas which includes CHF3, N2 and SiCl4.
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