| 摘要 |
PURPOSE: A high voltage transistor device with an integrated register is provided to raise a terminal end to a high voltage level by switching a node with a positive 550V. CONSTITUTION: A dielectric layer(40) is formed on a first buried area and a second buried area. A resistive material layer is formed on the dielectric layer. The resistive material layer has a first end and a second end. A first terminal and a second terminal are respectively connected to the first end and the second end of the resistive material layer. A third terminal is electrically connected to a second positively doped area. |
