| 摘要 |
PURPOSE: A semiconductor device and a forming method thereof are provided to reduce the occupied area of a unit cell by simplifying the structure of the semiconductor device. CONSTITUTION: A trench has a bottom surface(112b) with one side which is formed on the inner side of a semiconductor substrate(100) and a bottom surface on the other side. A bit line(126) is connected to the bottom surface of the other side of the trench. A perpendicular gate electrode(140b) is formed in the sidewall of the trench. A storage electrode contact plug(146) is connected to the surface of the semiconductor substrate. A storage electrode(148) is connected to the storage electrode contact plug. A first insulating layer(114) is formed on the surface of the trench except for the bottom surface of the other side. A second insulating layer(116a) is formed on the bottom surface of the one side of the trench. A double thin film pattern protects the surface of the bit line in order to insulate the bit line and the perpendicular gate electrode.
|
