| 摘要 |
PURPOSE: An anti-fuse of a semiconductor device is provided to improve the properties of the semiconductor by improving the destruction efficiency of a gate insulating layer. CONSTITUTION: A semiconductor substrate comprises an active area(102) which is defined as an element isolation film(104). A gate(106) is composed of a plurality of gate lines which are formed in a gate insulating layer of the semiconductor substrate. Contact plugs(108) are separated from the gate line at regular intervals by a plurality of gate lines. The plurality of gate lines comprises a first gate line(106a), a second gate line(106b), and a third gate line(106c). The first gate line, the second gate line, and the third gate line are connected with one gate line(107) which is included in the one-side end. A bit line contact plug(110) is installed on the top of one gate line.
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