| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce inter-cell interference due to parasitic capacitance between adjoining cells, and to reduce deterioration of transistor characteristics in a miniaturized nonvolatile semiconductor memory device. <P>SOLUTION: A gate dielectric film 21, a floating gate electrode 22, a tunnel dielectric film 23 and a control gate electrode 24 are laminated sequentially on a channel semiconductor, where the floating gate electrode 22 and control gate electrode 24 have pointed ends 25 and 26 having curvatures on the tunnel dielectric film 23 side. Thickness of the tunnel dielectric film 23 and gate dielectric film 21 is adjusted so that the capacitance of the tunnel dielectric film 23 is equivalent to that of the gate dielectric film 21 or less. Furthermore, the processing of injecting electrons from the pointed end 26 of the control gate electrode 24 into the floating gate electrode 22, and the processing of injecting electrons from the pointed end 26 of the floating gate electrode 22 into the control gate electrode 24 are controlled by a voltage applied between the channel semiconductor and the control gate electrode 24. <P>COPYRIGHT: (C)2012,JPO&INPIT |
