发明名称 NONVOLATILE STORAGE DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To enhance the characteristic of a nonvolatile storage device. <P>SOLUTION: A nonvolatile storage device has a storage cell connected to a first wiring and a second wiring, and the storage cell has plural layers. The plural layers have a storage layer which is sandwiched between a first electrode film and a second electrode film and contains carbon, and a barrier layer which is provided at least between the first electrode film and the storage layer or between the second electrode film and the storage layer and contains carbon. The barrier layer is lower in electrical resistivity than the storage layer. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012004242(A) 申请公布日期 2012.01.05
申请号 JP20100136453 申请日期 2010.06.15
申请人 TOSHIBA CORP 发明人 FUKUMIZU HIROYUKI;YAMAMOTO KAZUHIKO;NAKAI TSUKASA;NOJIRI YASUHIRO
分类号 H01L27/10;H01L27/28;H01L45/00;H01L49/00;H01L51/05;H01L51/30 主分类号 H01L27/10
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