<p>Disclosed is a cleaning method for metallic or silicon wafers (1), which is characterized by: containing a pretreating step for improving a wafer surface; containing a water-repellent protective film formation step, in which a chemical solution for forming the water-repellent protective film containing a water-repellent protective film formation agent for forming the water-repellent protective film (10) on the improved wafer surface is retained in at least the recesses (4) of the wafer, and the water-repellent protective film (10) is formed on the recess surfaces; and by the water-repellent protective film formation agent being a silicon compound represented by R1 aSiX4-a. This method improves the cleaning step susceptible to causing pattern collapse.</p>
申请公布号
WO2012002200(A1)
申请公布日期
2012.01.05
申请号
WO2011JP64201
申请日期
2011.06.22
申请人
CENTRAL GLASS COMPANY, LIMITED;SAITO, MASANORI;ARATA, SHINOBU;SAIO, TAKASHI;KUMON, SOICHI