SAPPHIRE SUBSTRATE, METHOD FOR PRODUCING SAME, AND NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT

摘要

Disclosed is a sapphire substrate for a nitride semiconductor light emitting element, on which a nitride semiconductor having excellent crystallinity can be grown, and which is capable of providing a nitride semiconductor light emitting element that has excellent light extraction efficiency. The sapphire substrate comprises a plurality of projections on one main surface, and a nitride semiconductor light emitting element is formed by growing a nitride semiconductor on the main surface. Each projection has a conical shape, and the inclined surface of each projection is composed of a crystal growth suppression surface that is suppressed in the growth of a nitride semiconductor in comparison to the substrate surface lying between two adjacent projections. In addition, the inclined surface of each projection has an inclination changing line wherein the inclination angle is discontinuously changed.