| 摘要 |
PURPOSE: A light emitting device and a projector are provided to control non-emission reunion at the side of a first minute wall shape member and a second minute wall shape member by forming a semiconductor member between the first minute wall shape member and the second minute wall shape member. CONSTITUTION: A light emitting device(100) comprises a first cladding layer(104), a second cladding layer(106), and a structure(110). The light emitting device comprises a substrate(102), an anti-reflective layer, a contact layer(107), an insulating member(109), a first electrode, and a second electrode. The substrate is composed of a first conductivity type GaN substrate or a GaN template substrate which forms the GaN layer of an n-type on a sapphire substrate. The first cladding layer, the structure, and the second cladding layer are successively formed on the substrate.
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