| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory capable of preventing movement of electric charges between adjacent memory cells and capable of improving charge retention characteristics of memory cells, and to provide a method of manufacturing the same. <P>SOLUTION: The semiconductor memory comprises: a silicon layer 70 formed in a columnar shape on a silicon substrate 10; a gate insulating film formed by a tunnel insulating film 60, a charge storage layer 50, and a block insulating layer 40 so as to surround the silicon layer 70; and laminate structure that is formed so as to surround the gate insulating film, and in which a plurality of interlayer dielectric films 20 and a plurality of control gate electrode layers 30 are alternately laminated on the substrate 10. In the semiconductor memory, memory cells are configured by vertical transistors composed of the silicon layer 70, the tunnel insulating film 60, the charge storage layer 50, the block insulating film 40, and the control gate electrode layers 30. The charge storage layer 50 includes regions having a lower trap level than portions adjacent to the memory cells therein, in between the memory cells vertically adjacent to each other. <P>COPYRIGHT: (C)2012,JPO&INPIT |
