| 摘要 |
In a thin-film transistor array according to an embodiment of the present invention, thin-film transistors are disposed in a matrix array, the thin-film transistor including a gate electrode that is formed on a substrate, a gate insulating layer that is formed on the gate electrode, a source electrode that is formed on the gate insulating layer, a pixel electrode that is formed on the gate insulating layer, a drain electrode that is connected to the pixel electrode, and a semiconductor layer that is formed between the source electrode and the drain electrode, the gate electrode is connected to a gate line while the source electrode is connected to a source line, the thin-film transistor is formed in a range of the source line and the thin-film transistor array includes a stripe insulating film such that the source line and the semiconductor layer are covered with the stripe insulating film.
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