<p>An integrated circuit (IC) is disclosed. The IC includes a first global voltage node and a second global voltage node. The IC further includes two or more power domains (21, 22) each coupled to the first global voltage node. Each of the two or more power domains (21, 22) includes a functional unit (24) and a local voltage node coupled to the functional unit (24). Each of the plurality of power domains (21, 22) further includes a power-gating transistor (25) coupled between the local voltage node and the second global voltage node, and an ESD (electrostatic discharge) circuit (26) configured to detect an occurrence of an ESD event and further configured to cause activation of the transistor (25) responsive to detecting the ESD event.</p>
申请公布号
WO2012003214(A1)
申请公布日期
2012.01.05
申请号
WO2011US42362
申请日期
2011.06.29
申请人
ADVANCED MICRO DEVICES, INC.;KOSONOCKY, STEPHEN, V.;ANDERSON, WARREN, R.