发明名称 |
METHODS OF FORMING PHASE CHANGE MATERIALS AND METHODS OF FORMING PHASE CHANGE MEMORY CIRCUITRY |
摘要 |
<p>A method of forming a phase change material which having germanium and tellurium therein includes depositing a germanium-containing material over a substrate. Such material includes elemental-form germanium. A gaseous tellurium-comprising precursor is flowed to the germanium-comprising material and tellurium is removed from the gaseous precursor to react with the elemental-form germanium in the germanium-comprising material to form a germanium and tellurium-comprising compound of a phase change material over the substrate. Other implementations are disclosed.</p> |
申请公布号 |
KR20120002543(A) |
申请公布日期 |
2012.01.05 |
申请号 |
KR20117026685 |
申请日期 |
2010.03.22 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
MARSH EUGENE P.;QUICK TIMOTHY A.;UHLENBROCK STEFAN |
分类号 |
H01L21/8247;H01L27/115 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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