ROM CELL CIRCUIT FOR FINFET DEVICES

摘要

PURPOSE: A ROM cell circuit for FINFET devices is provided to reduce the size of a ROM cell by applying a multiple pin having a plurality of different spaces. CONSTITUTION: In a ROM cell circuit for FINFET devices, a plurality of pin activation regions(102) are formed in a semiconductor substrate. A plurality of gates(104) are formed in the plural pin activation regions. The plural gates is arranged in a second direction perpendicular to a first direction. A plurality of read-only memory cells(52) are formed by the plural pin activation region and plural gate. The ROM cell includes a drain contact having a first contact area and a source contact having a second contact area.