| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an MCP-type semiconductor memory device including a plurality of memory chips, which can be easily designed and manufactured and is equipped with a failed-cell repair function allowing minimization of an increase in chip area. <P>SOLUTION: The semiconductor memory device includes: a plurality of memory chips; and a memory control chip for specifying a memory chip address in response to an access request from the outside and controlling access to the specified address. The memory chips includes: first and second storage areas; and an information storage part which stores an address information indicating the relation between a specific address in the first storage area and an address in the second storage area. The memory control chip has an address conversion part for, if an access request to a specific address in the first storage area which is indicated in the address information is issued, specifying an address by converting the specific address into its corresponding address in the second storage area on the basis of the correspondence indicated in the address information. <P>COPYRIGHT: (C)2012,JPO&INPIT |
