发明名称 |
Electronic Device |
摘要 |
There is provided an electronic device in which the deterioration of the device is prevented and an aperture ratio is improved without using a black mask and without increasing the number of masks. In the electronic device, a first electrode (113) is disposed on another layer different from the layer on which a gate wiring (145) is disposed as a gate electrode, and a semiconductor layer of a pixel switching TFT is superimposed on the gate wiring (145) so as to be shielded from a light. Thus, the deterioration of the TFT is suppressed, and a high aperture ratio is realized.
|
申请公布号 |
US2012001187(A1) |
申请公布日期 |
2012.01.05 |
申请号 |
US201113229811 |
申请日期 |
2011.09.12 |
申请人 |
YAMAZAKI SHUNPEI;KOYAMA JUN;INUKAI KAZUTAKA;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;KOYAMA JUN;INUKAI KAZUTAKA |
分类号 |
H01L31/12;H01L33/08;G09G3/30;G09G3/32;H01L27/32;H01L29/786;H01L33/16;H05B33/10 |
主分类号 |
H01L31/12 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|