发明名称 CONNECTING MATERIAL, METHOD FOR MANUFACTURING CONNECTING MATERIAL AND SEMICONDUCTOR DEVICE
摘要 In a connecting material of the present invention, a Zn series alloy layer is formed on an outermost surface of an Al series alloy layer. In particular, in the connecting material, an Al content of the Al series alloy layer is 99 to 100 wt. % or a Zn content of the Zn series alloy layer is 90 to 100 wt. %. By using this connecting material, the formation of an Al oxide film on the surface of the connecting material at the time of the connection can be suppressed, and preferable wetness that cannot be obtained with the Zn—Al alloy can be obtained. Further, when an Al series alloy layer is left after the connection, since the soft Al functions as a stress buffer material, the high connection reliability can be achieved.
申请公布号 US2012000965(A1) 申请公布日期 2012.01.05
申请号 US201113228169 申请日期 2011.09.08
申请人 IKEDA OSAMU;OKAMOTO MASAHIDE 发明人 IKEDA OSAMU;OKAMOTO MASAHIDE
分类号 H01L21/00;B23K31/00 主分类号 H01L21/00
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