发明名称 APPARATUSES AND METHODS FOR ATOMIC LAYER DEPOSITION
摘要 Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel. The chamber lid assembly further contains a showerhead assembly disposed below the inlet manifold assembly, a water box disposed between the inlet manifold assembly and the showerhead assembly, and a remote plasma system (RPS) disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel.
申请公布号 US2012000422(A1) 申请公布日期 2012.01.05
申请号 US201113232317 申请日期 2011.09.14
申请人 LAM HYMAN;ZHENG BO;AI HUA;JACKSON MICHAEL;YUAN XIAOXIONG (JOHN);WANG HOU GONG;UMOTOY SALVADOR P.;YU SANG HO;APPLIED MATERIALS, INC. 发明人 LAM HYMAN;ZHENG BO;AI HUA;JACKSON MICHAEL;YUAN XIAOXIONG (JOHN);WANG HOU GONG;UMOTOY SALVADOR P.;YU SANG HO
分类号 C23C16/455;F17D1/20 主分类号 C23C16/455
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