MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY

摘要

Disclosed is a perpendicular domain wall motion MRAM in which the magnetization in both ends of a magnetization free layer is fixed by magnetization fixed layers, wherein prevention of an increase in write current caused by magnetic field leakage from the magnetization fixed layers is desired. A first magnetization free layer having perpendicular magnetic anisotropy comprises a first magnetization fixed region, a second magnetization fixed region, and a magnetization free region. A magnetization fixed layer is provided with a first magnetization fixed layer magnetically connected to the first magnetization fixed region. If the curved line section which forms part of the outer peripheral line of the first magnetization fixed layer and traverses the first magnetization free layer is taken as a first boundary line, the line segment which connects the centers of the magnetization free region and the first magnetization fixed region is taken as a first line segment, and the line segment which is a line perpendicular to the first line segment and connects to the first boundary line is taken as a first perpendicular line, a first displacement exists between the first boundary line and the first perpendicular line. This first displacement facilitates depinning of a magnetic domain wall.