| 摘要 |
PURPOSE: A power semiconductor device is provided to reduce on-sate loss by improving resistance conductivity by repeating an additional improvement layer and an additional well layer. CONSTITUTION: The source region(3) of a first conductive type is contacted with the electrode(11) of an emitter. The base layer(4) of a second conductive type is arranged on the side(12) of the emitter. The collector layer(8) of the second conductive type is arranged on the side(16) of a collector. The drift layer(7) of the first conductive type is arranged between the base layer and the collector layer. A trench gate electrode(2) is electrically insulated from the source region, base layer, and drift layer by the insulating layer(25). |
