METHOD FOR REDUCING IRREGULARITIES AT THE SURFACE OF A LAYER TRANSFERRED FROM A SOURCE SUBSTRATE TO A GLASS-BASED SUPPORT SUBSTRATE
摘要
<p>The present invention concerns a method for reducing irregularities at the surface of a layer (4) transferred from a source substrate (1) to a glass-based support substrate (3), wherein said transfer comprises the steps of: (a) generating a weakening zone (2) in the source substrate (1); (b) contacting the source substrate (1) and the glass-based support substrate (3); (c) splitting the source substrate (1) at the weakening zone (2); characterized in that the thickness of the glass-based substrate is comprised between 300 µm and 600 µm.</p>
申请公布号
WO2012000821(A1)
申请公布日期
2012.01.05
申请号
WO2011EP60251
申请日期
2011.06.20
申请人
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES;DELPRAT, DANIEL;DURET, CARINE;BEN MOHAMED, NADIA;LALLEMENT, FABRICE