发明名称 METHOD FOR REDUCING IRREGULARITIES AT THE SURFACE OF A LAYER TRANSFERRED FROM A SOURCE SUBSTRATE TO A GLASS-BASED SUPPORT SUBSTRATE
摘要 <p>The present invention concerns a method for reducing irregularities at the surface of a layer (4) transferred from a source substrate (1) to a glass-based support substrate (3), wherein said transfer comprises the steps of: (a) generating a weakening zone (2) in the source substrate (1); (b) contacting the source substrate (1) and the glass-based support substrate (3); (c) splitting the source substrate (1) at the weakening zone (2); characterized in that the thickness of the glass-based substrate is comprised between 300 µm and 600 µm.</p>
申请公布号 WO2012000821(A1) 申请公布日期 2012.01.05
申请号 WO2011EP60251 申请日期 2011.06.20
申请人 S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES;DELPRAT, DANIEL;DURET, CARINE;BEN MOHAMED, NADIA;LALLEMENT, FABRICE 发明人 DELPRAT, DANIEL;DURET, CARINE;BEN MOHAMED, NADIA;LALLEMENT, FABRICE
分类号 H01L21/762 主分类号 H01L21/762
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