SEMICONDUCTOR DEVICES HAVING A CONTACT PLUG

摘要

PURPOSE: A semiconductor device including a contact plug is provided to obtain high reliability and integration by increasing an amount of turn-on currents of a field effect transistor by widening an active area. CONSTITUTION: A device isolation pattern(102) is arranged on a substrate to define an active area(ACT). A gate electrode(110) is arranged on the upper side of the active area. A capping dielectric pattern is arranged on the gate electrode. A first source/drain area(122) and a second source/drain area(124) are formed in the active area of both sides of the gate electrode. An interlayer dielectric layer(130) is arranged on the substrate including the gate electrode.