发明名称 GAS BARRIER FILM AND GAS BARRIER FILM FORMATION METHOD
摘要 Disclosed is a gas barrier formation method which, without heat treating a coating film formed by applying a coating liquid containing polysilazanes, has high gas barrier performance achieved by an extremely quick modification treatment of a few seconds; also disclosed is a gas barrier film. In the disclosed gas barrier film formation method, a discharge gas containing an inert gas is supplied to the surface of a coating film formed by coating a substrate with a coating liquid containing polysilazanes. Plasma formed in a discharge space to which a high frequency electric field is applied, or light emitted from said plasma, is irradiated onto the surface of the aforementioned coating film to modify the same and to form a gas barrier film. The aforementioned discharge gas contains at least a carbon dioxide gas or carbon monoxide gas, the content thereof being between 0.01 volume% and 3.0 volume%, and the frequency of the aforementioned high frequency electric field is in the microwave range between 300 and 30,000 MHz.
申请公布号 WO2012002150(A1) 申请公布日期 2012.01.05
申请号 WO2011JP63676 申请日期 2011.06.15
申请人 KONICA MINOLTA HOLDINGS, INC.;TODA YOSHIRO 发明人 TODA YOSHIRO
分类号 B05D5/00;B05D3/04;B05D7/24;C08J7/04;H01L51/50;H05B33/02 主分类号 B05D5/00
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