| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for evaluating light resistance of a thin film with respect to ArF excimer laser exposure light, and to provide a mask blank and a transfer mask capable of guaranteeing the light resistance. <P>SOLUTION: A method for evaluating a thin film for a transfer mask having a thin film in which a pattern is formed on a transparent substrate by irradiating with ArF excimer laser exposure light includes a step of evaluating light resistance of the thin film by intermittently irradiating the thin film with pulsed laser light. <P>COPYRIGHT: (C)2012,JPO&INPIT |
