| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light-emitting diode capable of actualizing a large amount of light emission, high light emission efficiency and uniform surface light emission, and is low-cost, and a light emitting device, an illumination device and a display using the same. <P>SOLUTION: An n-type semiconductor layer 21 and a p-type semiconductor layer 23 are laminated on one surface of a support layer 1. A p-side electrode 4 penetrates the n-type semiconductor layer 21 positioned on the side of the support layer 1 from the side of the support layer 1, and a tip thereof reaches the p-type semiconductor layer 23. An n-side electrode is a thin-film electrode 3 of the n-type semiconductor layer 21 formed on a surface positioned on the side of the support layer 1. <P>COPYRIGHT: (C)2012,JPO&INPIT |
