| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor light-emitting element with excellent crystallinity. <P>SOLUTION: According to an embodiment, a manufacturing method of semiconductor light-emitting element includes a step of forming an active layer containing indium on a heated substrate and a step of forming a multilayer film made of a nitride semiconductor on the active layer in a state where the substrate is heated to the substantially same temperature as that when forming the active layer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
