| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a device and method for forming a film excelling in coverage when forming a metal layer on a side face and a bottom face in a minute structure of a high aspect ratio formed on a substrate surface. <P>SOLUTION: The device 1 for forming a film is used for forming, by sputtering, a metal layer on a substrate surface 4 formed with a minute structure. The device 1 for forming a film includes at least: a chamber 2 having an internal space for storing both a substrate 4 and a target 5 forming a base material of the metal layer therein by facing them to each other; an exhaust unit to reduce the pressure in the chamber 2; a gas introduction unit to introduce sputtering gas into the chamber 2; a first magnetic field generation unit 6 to generate a magnetic filed in front of a sputtering surface 5a of the target 5; a D.C. power source 7 for applying a negative D.C. voltage to the target 5; and a second magnetic field generation unit 10 to generate a magnetic field B in a direction from the target 5 toward the substrate 4. <P>COPYRIGHT: (C)2012,JPO&INPIT |
