| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method and an apparatus for forming a silicon film which can suppress the occurrence of voids. <P>SOLUTION: The method for forming a silicon film includes a first deposition step, an etching step, and a second deposition step. In the first deposition step, a silicon film is deposited to fill a trench in a workpiece. In the etching step, the opening of the trench is enlarged by etching the silicon film deposited in the first deposition step. In the second deposition step, deposition is performed to fill the trench having the opening enlarged in the etching step with a silicon film. Consequently, a silicon film is formed in the trench of the workpiece having a trench formed in its surface. <P>COPYRIGHT: (C)2012,JPO&INPIT |
