| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device, containing a gate insulating film comprising a substance, having a high dielectric constant as the substance having high dielectric constant as a gate structure, and to provide a manufacturing method of the same. <P>SOLUTION: In the semiconductor device and the manufacturing method of the same, the device is formed on a substrate and is formed on a gate insulating film pattern that contains a hafnium silicon dioxide containing solid substance and the gate insulating pattern; is disposed on the surface region of a substrate adjacent to the gate structure, containing a first gate dielectric film pattern and the gate structure, and includes source/drain regions where n-type impurity have been doped. <P>COPYRIGHT: (C)2012,JPO&INPIT |
