发明名称 HIGH-VOLTAGE OPERATION METHOD OF FIELD EFFECT TRANSISTOR AND BIAS CIRCUIT THEREOF
摘要 <P>PROBLEM TO BE SOLVED: To build a high-voltage operation field effect transistor in an IC or LSI with the use of a transistor configuration portion for standard power supply voltage operation in an IC or LSI and a process technology. <P>SOLUTION: To increase the operation voltage of a field effect transistor, a gate is divided, and a divided gate nearer to a drain is supplied with a potential that is nearer to the potential of the drain and that changes according to the potential of the drain. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012004581(A) 申请公布日期 2012.01.05
申请号 JP20110167139 申请日期 2011.07.29
申请人 SEIKO INSTRUMENTS INC;HAYASHI YUTAKA 发明人 HAYASHI YUTAKA;HASEGAWA TAKASHI;YOSHIDA YOSHIFUMI;OSANAI JUN
分类号 H01L27/06;H01L21/822;H01L21/8234;H01L27/04;H01L27/08;H01L27/088;H01L29/78;H01L29/786 主分类号 H01L27/06
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