发明名称 |
HIGH-VOLTAGE OPERATION METHOD OF FIELD EFFECT TRANSISTOR AND BIAS CIRCUIT THEREOF |
摘要 |
<P>PROBLEM TO BE SOLVED: To build a high-voltage operation field effect transistor in an IC or LSI with the use of a transistor configuration portion for standard power supply voltage operation in an IC or LSI and a process technology. <P>SOLUTION: To increase the operation voltage of a field effect transistor, a gate is divided, and a divided gate nearer to a drain is supplied with a potential that is nearer to the potential of the drain and that changes according to the potential of the drain. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012004581(A) |
申请公布日期 |
2012.01.05 |
申请号 |
JP20110167139 |
申请日期 |
2011.07.29 |
申请人 |
SEIKO INSTRUMENTS INC;HAYASHI YUTAKA |
发明人 |
HAYASHI YUTAKA;HASEGAWA TAKASHI;YOSHIDA YOSHIFUMI;OSANAI JUN |
分类号 |
H01L27/06;H01L21/822;H01L21/8234;H01L27/04;H01L27/08;H01L27/088;H01L29/78;H01L29/786 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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