发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device and a semiconductor manufacturing device such that the number of times of transfer between the manufacturing devices is decreased and a wafer cracking risk is reduced. <P>SOLUTION: The method of manufacturing the semiconductor device includes the processes of forming a mark made of a non-single-crystalline reformed layer inside a back surface of a semiconductor wafer by irradiating the semiconductor wafer with laser light from the back surface; and exposing the reformed layer by subjecting the back surface of the semiconductor wafer to polishing or grinding processing after the process of forming the mark. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012004278(A) 申请公布日期 2012.01.05
申请号 JP20100136906 申请日期 2010.06.16
申请人 FUJITSU SEMICONDUCTOR LTD 发明人 TAZAWA MASAYA;FUKAYA HIRONORI;WATANABE NAOYUKI
分类号 H01L21/301;B23K26/00;B23K26/08;B23K26/40;H01L21/304 主分类号 H01L21/301
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