发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device and a semiconductor manufacturing device such that the number of times of transfer between the manufacturing devices is decreased and a wafer cracking risk is reduced. <P>SOLUTION: The method of manufacturing the semiconductor device includes the processes of forming a mark made of a non-single-crystalline reformed layer inside a back surface of a semiconductor wafer by irradiating the semiconductor wafer with laser light from the back surface; and exposing the reformed layer by subjecting the back surface of the semiconductor wafer to polishing or grinding processing after the process of forming the mark. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012004278(A) |
申请公布日期 |
2012.01.05 |
申请号 |
JP20100136906 |
申请日期 |
2010.06.16 |
申请人 |
FUJITSU SEMICONDUCTOR LTD |
发明人 |
TAZAWA MASAYA;FUKAYA HIRONORI;WATANABE NAOYUKI |
分类号 |
H01L21/301;B23K26/00;B23K26/08;B23K26/40;H01L21/304 |
主分类号 |
H01L21/301 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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