| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor integrated circuit device to solve the problem in which: in mass production processes of semiconductor integrated circuit devices it is difficult, when reconstructing multilayer resist patterns, to remove a silicon containing intermediate film in a multilayer resist film by using a normal resist stripping liquid or an oxygen plasma treatment because the liquid for removing resist containing no silicon or the treatment by oxygen plasma normally has a low removing ability of silicon. <P>SOLUTION: A wet treatment using a medicinal solution is executed on a multilayer resist film after an ozone treatment in a step of removing a silicon-contained intermediate layer of a multilayer resist film on a wafer in a process of manufacturing a semiconductor integrated circuit device. <P>COPYRIGHT: (C)2012,JPO&INPIT |
