Semiconductor Device and Method for Forming the Same

摘要

A semiconductor device comprises a semiconductor substrate on an insulating layer; and a second gate, the second gate is located on the insulating layer and is embedded at least partially in the semiconductor substrate. A method for forming a semiconductor device comprises: forming a semiconductor substrate on an insulating layer; forming a void within the semiconductor substrate, with the insulating layer being exposed by the void; and forming a second gate, with the void being filled with at least one part of the second gate. It facilitates the reduction of the short channel effects, resistances of source and drain regions, and parasitic capacitances.