发明名称 CIS-BASED THIN FILM SOLAR CELL
摘要 <P>PROBLEM TO BE SOLVED: To obtain a high efficiency CIS-based solar cell by reducing leakage current without requiring any extra process. <P>SOLUTION: In the CIS-based thin-film solar cell 10 where a back electrode layer 14 divided by a pattern 1, a CIS-based light absorption layer 16 and a transparent conductive film are formed sequentially on a substrate 12, the back electrode layer 14 is provided, on the surface in contact with the CIS-based light absorption layer 16, with an intermediate layer 20 composed of a compound of a metal composing the back electrode layer 14 and a group VI element composing the CIS-based light absorption layer 16. The intermediate layer 20 includes a first intermediate layer portion 20a formed on the top face which is parallel with the substrate 12, and a second intermediate layer portion 20b formed on a lateral face which is perpendicular to the substrate 12 and facing the pattern 1. The thickness of the second intermediate layer portion 20b is greater than that of the first intermediate layer portion 20a. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012004370(A) 申请公布日期 2012.01.05
申请号 JP20100138356 申请日期 2010.06.17
申请人 SHOWA SHELL SEKIYU KK 发明人 MORIMOTO TAKUYA;SUGIMOTO HIRONORI;HAKUMA HIDEKI
分类号 H01L31/04 主分类号 H01L31/04
代理机构 代理人
主权项
地址