| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress the deterioration of an electronic elements formed on a substrate, when a plurality of modified regions having different depths in the thickness direction of the substrate are formed in the substrate by using a laser beam. <P>SOLUTION: An element-group formation substrate 20 having a plurality of semiconductor light-emitting elements 21 formed on the substrate front surface 11a of a substrate 11 is sequentially irradiated with a laser beam 64 with a first output from the side of the substrate back surface 11b of the substrate 11 along the y-direction and the laser beam 64 is sequentially converged to a part where the depth from the back side 11b of the substrate is a first depth D1, thereby forming a first modified region L1 in the substrate 11. The element-group formation substrate 20 having the first modified region L1 formed therein is sequentially irradiated with the laser beam 64 with a third output (<the first output) from the side of the substrate back surface 11b of the substrate 11 along the y direction, and the laser beam 64 is sequentially converged to a part where the depth from the substrate back side 11b is a third depth D3 which is shallower than the first depth D1, thereby forming a third modified region L3 in the substrate 11 along the first modified region L1. <P>COPYRIGHT: (C)2012,JPO&INPIT |
