| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an insulator film consisting of oxide in high quality for a normally-off semiconductor element. <P>SOLUTION: A manufacturing method of a semiconductor substrate includes the step of forming an insulator film containing oxide on a substrate 3 having a semiconductor laminate structure. In the step, when depositing an elementary substance of an element or a compound of elements constituting the oxide on the substrate 3 having the semiconductor laminate structure, by precisely controlling and mixing water vapor pressure into hydrogen gas by means of heating or cooling of high purity water, composition of the oxide is precisely controlled by precisely controlling oxygen partial pressure oxidizing the elementary substance of the element or the compound of the elements. Thereby, the insulator film physicochemically adjusted to the substrate 3 having the semiconductor laminate structure is formed. <P>COPYRIGHT: (C)2012,JPO&INPIT |
