| 摘要 |
To provide a microwave/milliwave band high-frequency pulse signal generating device that enables realization of structural simplification, high performance, compact integration, easy design, low power consumption, and low cost. A radiation type oscillator substrate S1 having an inner-layer GND 12 interposed between a front-side dielectric substrate 10 and a rear-side dielectric substrate 11 is provided on the radiation surface side with a pair of axially symmetrical patches 4, 4, a gate electrode 2 and drain electrode 3 of a microwave transistor 1 are respectively connected to the conductor patches 4, 4, DC bias is supplied to the gate electrode 2 through an RF choke circuit 5a, a monopulse from a monopulse generation circuit 7 is supplied to the drain electrode 3 through an RF choke circuit 5b, an impedance line 9 satisfying an oscillating condition is connected to a source electrode 8, and a high-frequency pulse signal of an oscillation frequency/frequency bandwidth determined by negative resistance produced by short-duration operation of the microwave transistor 1 and the resonant cavity structure is generated and simultaneously radiated into space. |
