发明名称 |
Formation of III-V Based Devices on Semiconductor Substrates |
摘要 |
A device includes a semiconductor substrate, and insulation regions in the semiconductor substrate. Opposite sidewalls of the insulation regions have a spacing between about 70 nm and about 300 nm. A III-V compound semiconductor region is formed between the opposite sidewalls of the insulation regions. |
申请公布号 |
US2012001239(A1) |
申请公布日期 |
2012.01.05 |
申请号 |
US20100827709 |
申请日期 |
2010.06.30 |
申请人 |
KO CHIH-HSIN;WANN CLEMENT HSINGJEN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
KO CHIH-HSIN;WANN CLEMENT HSINGJEN |
分类号 |
H01L27/085;H01L29/20 |
主分类号 |
H01L27/085 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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